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  TCAD培训课程
   班级规模及环境--热线:4008699035 手机:15921673576( 微信同号)
       坚持小班授课,为保证培训效果,增加互动环节,每期人数限3到5人。
   上课时间和地点
上课地点:【上海】:同济大学(沪西)/新城金郡商务楼(11号线白银路站) 【深圳分部】:电影大厦(地铁一号线大剧院站)/深圳大学成教院 【北京分部】:北京中山学院/福鑫大楼 【南京分部】:金港大厦(和燕路) 【武汉分部】:佳源大厦(高新二路) 【成都分部】:领馆区1号(中和大道) 【沈阳分部】:沈阳理工大学/六宅臻品 【郑州分部】:郑州大学/锦华大厦 【石家庄分部】:河北科技大学/瑞景大厦 【广州分部】:广粮大厦 【西安分部】:协同大厦
近开课时间(周末班/连续班/晚班)
TCAD培训课程:2020年2月10日
   实验设备
     ☆资深工程师授课

        
        ☆注重质量
        ☆边讲边练

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        ☆合格学员免费颁发相关工程师等资格证书,提升您的职业资质

        专注高端培训15年,端海提供的证书得到本行业的广泛认可,学员的能力
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        ★实验设备请点击这儿查看★
   新优惠
       ◆在读学生凭学生证,可优惠500元。
   质量保障

        1、培训过程中,如有部分内容理解不透或消化不好,可免费在以后培训班中重听;
        2、课程完成后,授课老师留给学员手机和Email,保障培训效果,免费提供半年的技术支持。
        3、培训合格学员可享受免费推荐就业机会。

  TCAD培训课程
培训方式以讲课和实验穿插进行

课程描述:

Overview
SENTAURUS WORKBENCH: The class covers the basics of this framework tool that allows organization of parameterized TCAD simulations in a single project with many possible splits, or branches.

SENTAURUS PROCESS: Users will learn the specifics of this process simulation tool, in terms of syntax and introduction of various models to simulate fabrication process flows.

SENTAURUS STRUCTURE EDITOR: The class will show you how to create 2D and 3D device structures, import structures from a prior process simulation step, make boundary simplifications and properly mesh structures for any subsequent device simulations.

SENTAURUS DEVICE: The class covers the basics how to simulate the electrical characteristics of devices created with SENTAURUS PROCESS and/or SENTAURUS STRUCTURE EDITOR.

SENTAURUS VISUAL & INSPECT: Users will be taught how to visualize the structures and results generated from the process and device simulations, using these tools.

Objectives
At the end of this workshop the student should be able to:
  • Run parameterized process and device simulations
  • Visualize simulated doping profiles, structure boundaries and materials, I-V curves and internal device characteristics such as carrier densities, current densities, and electric fields.
  • Successfully combine mask layouts and process flows to perform simulations of fabrication processes involving single or multiple semiconductors, insulators and metals.
  • Select proper models for the simulation of fabrication processes and electrical behavior of devices
  • Properly mesh structures for adequate simulations
  • Perform AC analyses of RF parameters

Course Outline

Unit 1
Tool Overview
  • What is TCAD?
  • TCAD Tool Overview
SENTAURUS WORKBENCH
  • Getting Started
  • Running a Project
  • Creating a New Project
  • Building Multiple Experiments
  • Miscellaneous Features
SWB HANDS-ON ? FULL NMOS FLOW SIMULATION
  • Process flow
  • Re-meshing
  • Device simulation
  • Parameter extraction
Process simulation I - SENTAURUS PROCESS
  • Getting Started
  • 1D Process Simulation
  • 2D Process Simulation
  • Interface with ICWB
Unit 2
Process simulation II - SENTAURUS PROCESS
  • Changing Parameters and Models
  • Working with a Custom Calibration File
  • Working with SENTAURUS PROCESS Advanced Calibration
Process simulation III - SENTAURUS PROCESS
  • SProcess under SWB
  • Meshing with MGOALS
  • Other topics/Q&A
Structure editing, Meshing I - SENTAURUS STRUCTURE EDITOR
  • Getting Started
  • Generating 2D Boundaries
  • Generating Doping Profiles
  • Generating Meshes
  • Scripting and Parameterization
Structure editing, Meshing II - SENTAURUS STRUCTURE EDITOR
  • Three-Dimensional Structures
  • Process Emulation Mode
Unit 3
Device simulation I - SENTAURUS DEVICE
  • SENTAURUS DEVICE Basics
  • Quasistationary and Transient simulations
  • Parameter file
Device simulation II - SENTAURUS DEVICE
  • Carrier Transport Models
  • Mixed-mode SENTAURUS DEVICE
  • AC analysis
Device simulation III - SENTAURUS DEVICE
  • Advanced Examples
  • Solving convergence problems in SENTAURUS DEVICE
  • Q&A
Visualization tools - INSPECT & SENTAURUS VISUAL
  • Visualization of X-Y plots and post processing of results
  • Visualization of 2D and 3D structures along with simulation results
  • Interactive mode
  • Scripting - parameter extraction